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參數(shù)資料
| 型號： | NTE2508 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Video Output for HDTV |
| 中文描述： | 硅晶體管互補的HDTV視頻輸出 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE2508 |
NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
High Gain Bandwidth Product: f
T
= 500MHz
High Breakdown Voltage: V
CEO
= 120V Min
Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
High–Definition CRT Display Video Output
Wide–Band Amp
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V
120V
3V
300mA
600mA
1.3W
8W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 200mA
V
CE
= 10V, I
C
= 50mA
Min
–
–
40
20
–
Typ
–
–
–
–
400
Max
0.1
0.1
320
–
–
Unit
μ
A
μ
A
Gain Bandwidth Product
f
T
MHz
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