參數(shù)資料
型號(hào): NTE2511
廠商: NTE Electronics, Inc.
英文描述: Silicon Complementary Transistors High Frequency Video Output for HDTV
中文描述: 硅互補(bǔ)晶體管高頻高清晰度電視視頻輸出
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 22K
代理商: NTE2511
NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
High Gain Bandwidth Product: f
T
= 800MHz Typ.
Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: C
re
= 2.9pF
NTE2512: C
re
= 4.6pF
Applications:
Very High–Definition CRT Display
Video Output
Color TV Chroma Output
Wide–Band Amp
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V
60V
4V
500mA
1A
1.2W
10W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 100mA
Min
100
20
Typ
800
Max
0.1
1.0
320
Unit
μ
A
μ
A
Gain Bandwidth Product
f
T
MHz
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