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參數(shù)資料
| 型號： | NTE2519 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Voltage Driver |
| 中文描述： | 硅晶體管互補高壓驅(qū)動器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2519 |
NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
High Breakdown Voltage
Large Current Capacity
Isolated Package
Applications:
Color TV Audio Output
Converters
Inverters
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V
160V
6V
1.5A
2.5A
1.5W
10W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 120V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
Min
–
–
140
90
–
Typ
–
–
–
–
120
Max
1.0
1.0
400
–
–
Unit
μ
A
μ
A
Gain Bandwidth Product
f
T
MHz
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