參數(shù)資料
型號： NTE2335
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-TSSOP -25 to 85
中文描述： 硅NPN晶體管達林頓瓦特/內(nèi)部齊納二極管線運營電視
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE2335
NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
High Breakdown Voltage
Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage (R
BE
= 100
), V
CER
Emitter–Base Voltage, V
EBO
DC Collector Current, I
C
Total Power Dissipation (T
S
≤
+85
°
C, Note 1), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Soldering Point (T
S
≤
+85
°
C, Note 1), R
thJS
Note 1. T
S
is the temperature at the soldering point of the collector lead.
115V
95V
110V
3V
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W
+175
°
C
–65
°
to +150
°
C
. . . . . . . . . .
18K/W
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
f
T
I
C
= 0.1mA
I
C
= 10mA
I
C
= 10mA, R
BE
= 100
I
E
= 0.1mA
I
B
= 0, V
CE
= 50V
I
E
= 0, V
CB
= 50V
I
C
= 100mA, V
CE
= 10V, T
A
= +25
°
C
I
C
= 100mA, V
CE
= 10V, f = 100MHz,
T
A
= +25
°
C
I
C
= 0, V
CB
= 10V, f = 1MHz, T
A
= +25
°
C
I
E
= i
e
= 0, V
CB
= 10V f = 1MHz
115
–
–
V
Collector–Emitter Breakdown Voltage
95
–
–
V
110
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
100
–
–
20
DC Current Gain
20
35
–
Transition Frequency
0.8
1.2
–
GHz
Collector–Base Capacitance
C
cb
C
c
–
2.0
–
pF
Collector Capacitance
–
3.5
–
pF
相關(guān)PDF資料
PDF描述
NTE2507 Silicon NPN Transistor High Frequency Video Output
NTE2508 Silicon Complementary Transistors Video Output for HDTV
NTE2510 Silicon NPNTransistor High Frequency Video Output
NTE2511 Silicon Complementary Transistors High Frequency Video Output for HDTV
NTE2513 Silicon Complementary Transistors High Current Switch
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