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參數(shù)資料
| 型號： | NTE2504 |
| 廠商： | NTE Electronics, Inc. |
| 元件分類： | 音頻放大器 |
| 英文描述： | Silicon NPN Transistor High Gain Audio Amplifier |
| 中文描述： | 硅NPN晶體管高增益音頻放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | NTE2504 |
NTE2504
Silicon NPN Transistor
High Gain Audio Amplifier
Features:
Large Current Capacity (I
C
= 2A)
Adoption of MBIT Process
High DC Current Gain: h
FE
= 800 to 3200
Low Collector–Emitter Saturation Voltage: V
CE(sat)
<
0.5V
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V
25V
15V
2A
4A
1.2W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
CB
= 20V, I
E
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5V, I
C
= 500mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, f = 1MHz
I
C
= 1A, I
B
= 20mA
I
C
= 1A, I
B
= 20mA
I
C
= 10A, I
E
= 0
–
–
0.1
Emitter Cutoff Current
–
–
0.1
DC Current Gain
800
1500
3200
Current Gain–Bandwidth Product
–
260
–
MHz
Output Capacitance
–
27
–
pF
Collector–Emitter Saturation Voltage
–
0.15
0.5
V
Base–Emitter Saturation Voltage
–
0.85
1.2
V
Collector–Base Breakdown Voltage
30
–
–
V
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