參數(shù)資料
型號(hào): NTE2426
廠商: NTE Electronics, Inc.
英文描述: Quad Differential Comparator 14-CDIP -55 to 125
中文描述: 硅達(dá)林頓晶體管開(kāi)關(guān)互補(bǔ)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 22K
代理商: NTE2426
NTE2426 (NPN) & NTE2427 (PNP)
Silicon Complementary Transistors
Darlington Switch
Description:
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount
package designed for use in industrial switching applications such as print hammer, solenoid, relay,
and lamp drivers.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), V
CBO
Collector–Emitter Voltage, V
CER
Emitter–Base Voltage (Open Collector), V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
°
C, Note 1), P
tot
Operating Junction Temperature (Note 2), T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1, Note 2), R
thJA
Thermal Resistance, Junction–to–Tab (Note 2), R
thJTAB
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Note 2. Based on maximum average junction temperature in line with common industrial practice.
The resulting higher junction teperature of the output transistor part is taken into account.
90V
80V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
1.5A
100mA
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150
°
C
–65
°
to +150
°
C
125K/W
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10K/W
Electrical Characteristics:
(T
J
= +25
°
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
Collector Cutoff Current
I
CES
I
EBO
h
FE
V
CER
= 80V, V
BE
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 150mA, Note 3
V
CE
= 10V, I
C
= 500mA, Note 3
10
Emitter Cutoff Current
10
DC Current Gain
1000
2000
Note 3. Measured under pulsed conditions.
相關(guān)PDF資料
PDF描述
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