參數(shù)資料
型號(hào): NTE2410
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)
中文描述: 硅NPN晶體管高壓放大器/驅(qū)動(dòng)器(Comp到NTE2411)
文件頁數(shù): 1/2頁
文件大?。?/td> 21K
代理商: NTE2410
NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C, FR–5 Board, Note 1), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Total Power Dissipation (T
A
= +25
°
C, Alumina Substrate, Note 2), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
160V
180V
6V
600mA
225mW
1.8mW/
°
C
556
°
C/mW
300mW
2.4mW/
°
C
417
°
C/mW
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 1mA, I
B
= 0, Note 3
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100
°
C
V
EB
= 4V, I
C
= 0
160
V
Collector–Base Breakdown Voltage
180
V
Emitter–Base Breakdown Voltage
6
V
Collector Cutoff Current
50
nA
μ
A
nA
50
Emitter Cutoff Current
I
EBO
50
Note 3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
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