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參數(shù)資料
| 型號： | NTE2409 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408) |
| 中文描述： | 硅PNP晶體管通用放大器，表面貼裝（并發(fā)癥的NTE2408） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | NTE2409 |
NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEX
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current, I
EM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Base Current, I
BM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +60
°
C, Note 1), P
tot
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Tab, R
thJT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Tab–to–Soldering Points, R
thTS
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
thSA
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
80V
80V
65V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA
200mA
200mA
200mA
200mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
60K/W
280K/W
90K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
Test Conditions
Min
–
–
600
–
–
–
Typ
1
–
650
–
75
250
Max
15
4
750
820
300
650
Unit
nA
μ
A
mV
mV
mV
mV
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
J
= +150
°
C
V
CE
= 5V, I
C
= 2mA, Note 2
V
CE
= 5V, I
C
= 10mA, Note 2
I
C
= 10mA, I
B
= 0.5mA, Note 3
I
C
= 100mA, I
B
= 5mA, Note 3
Base–Emitter Voltage
V
BE
Collector–Emitter Saturation Voltage
V
CE(sat)
Note 2. V
BE
decreases by about 2mV/K with increasing temperature.
Note 3. V
BE(sat)
decreases by about 1.7mV with increasing temperature.
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