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參數(shù)資料
| 型號： | NTE2407 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) |
| 中文描述： | 硅PNP晶體管通用放大器，表面貼裝（并發(fā)癥的NTE2406） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE2407 |
NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (FR–5 Board, Note 1), P
D
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
thJA
Total Device Dissipation (Alumina Substrate, Note 2), P
D
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
thJA
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
60V
60V
5V
600mA
225mW
1.8mW/
°
C
556
°
C/W
300mW
2.4mW/
°
C
417
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
= 10
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0, Note 3
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= +125
°
C
V
CE
= 30V, V
EB(off)
= 0.5V
V
CE
= 30V, V
EB(off)
= 0.5V
60
60
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
V
V
μ
A
μ
A
nA
nA
0.01
10
50
50
I
CEX
I
B
Base Current
Note 3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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