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參數(shù)資料
| 型號： | NTE2406 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407) |
| 中文描述： | 硅NPN晶體管通用放大器，表面貼裝（并發(fā)癥的NTE2407） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | NTE2406 |
NTE2406
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2407)
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (FR–5 Board, Note 1), P
D
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
thJA
Total Device Dissipation (Alumina Substrate, Note 2), P
D
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
thJA
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
75V
40V
6V
600mA
225mW
1.8mW/
°
C
556
°
C/W
300mW
2.4mW/
°
C
417
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
= 10
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +125
°
C
V
CE
= 60V, V
EB(off)
= 3V
V
EB
= 3V, I
C
= 0
V
CE
= 60V, V
EB(off)
= 3V
75
40
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
V
V
μ
A
μ
A
nA
nA
nA
0.01
10
10
10
20
I
CEX
I
EBO
I
BL
Emitter Cutoff Current
Base Cutoff Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE2407 | Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) |
| NTE2408 | Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409) |
| NTE2409 | Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408) |
| NTE2410 | Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411) |
| NTE2412 | Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2407 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 75V IC=0.6A SOT-23 CASE GENERAL PURPOSE AMP SURFACE MOUNT 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:T-PNP-SI GEN PURP AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:3 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-23 |
| NTE2408 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 80V IC=0.1A SOT-23 CASE LOW NOISE DRIVER OUTPUT SURFACE M 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 65V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 65V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 65V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:290; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23 |
| NTE2408 (PKG OF 2) | 制造商:NTE Electronics 功能描述:SOT-23 NPN DRVR/OUT PKG OF 2 |
| NTE2409 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 80V IC=0.1A SOT-23 CASE LOW NOISE DRIVER OUTPUT SURFACE M 制造商:NTE Electronics 功能描述:T-PNP-SI LO NOISE AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP LO-NO DRV PKG OF 2 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -15V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:250mA; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 |
| NTE241 | 制造商:NTE Electronics 功能描述:T-NPN- SI-AF POSW 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 |
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