參數(shù)資料
型號: NTE2090
廠商: NTE Electronics, Inc.
英文描述: Integrated Circuit 7-Channel Transistor Array
中文描述: 集成電路7通道晶體管陣列
文件頁數(shù): 1/2頁
文件大?。?/td> 21K
代理商: NTE2090
NTE2090
Integrated Circuit
7–Channel Transistor Array
Description:
The NTE2090 is an integrated circuit in a 16–Lead DIP type package comprised of six NPN low satu-
ration drivers. All units feature integral clamp diodes for switching inductive loads and protective
diodes for protection against a negative input voltage.
Features:
Low Saturation Outputs:
V
CE(sat)
= 0.6V Max @ I
OUT
= 120mA
Output Rating:
20V/150mA
Output Clamp Diodes
CMOS and PMOS Compatable Inputs
Input Protection Diodes
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Sustaining Voltage, V
CE(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Current, I
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Current, I
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clamp Diode Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clamp Diode Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND Pin Current, I
GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended Operating Conditions:
(T
A
= –40
°
to +85
°
C unless otherwise specified)
Parameter
Symbol
Supply Voltage
V
CC
Output Current
I
OUT
T
PW
= 25ms, D
F
= 10% 7 Circuits
Input Voltage
V
IN
Clamp Diode Reverse Voltage
V
R
Clamp Diode Forward Voltage
I
F
Power Dissipation
P
D
–0.5V to +20V
–0.5V to V
CC
+0.5V
150mA
–37V to +20V
1.5mA
20V
120mA
800mA
1W
–40
°
to +85
°
C
–55
°
to +150
°
C
Test Conditions
Min
4.75
0
0
–35
Typ
Max
18
120
100
V
CC
18
120
0.36
Unit
V
mA
mA
V
V
mA
W
相關(guān)PDF資料
PDF描述
NTE20 Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output
NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
NTE210 Silicon Complementary Transistors General Purpose Output & Driver
NTE21128 Integrated Circuit NMOS, 128K (16K x 8) UV EPROM
NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE21 制造商:NTE Electronics 功能描述:Bipolar Transistor Transistor Polarity:D
NTE210 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 75V 制造商:NTE Electronics 功能描述:T-NPN- SI-AF POSW 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 75V 1A 3-Pin(3+Tab) TO-202
NTE2102 制造商:NTE Electronics 功能描述:IC-MOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 350NS, 16-DIP; Memory Size:1Kbit; Memory Configuration:1K x 1; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:16; Access Time:350ns; Operating Temperature Min:0C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 1K x 1 350ns 16-Pin PDIP
NTE2104 制造商:NTE Electronics 功能描述:IC-MOS 4K DRAM 制造商:NTE Electronics 功能描述:4K X 1 SRAM 200NS 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C; Memory Size:4KB 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C
NTE2107 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes