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參數(shù)資料
| 型號(hào)： | NTE2102 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns |
| 中文描述： | 集成電路NMOS管，每1000靜態(tài)RAM（SRAM），350ns |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | NTE2102 |
NTE2102
Integrated Circuit
NMOS, 1K Static RAM (SRAM), 350ns
Description:
The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead
DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage
cells eliminate the need for clock or refresh circuitry.
Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs
and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output
allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out
have the same polarity.
Features:
Single 5V Supply
All Inputs and Outputs Directly DTL/TTL Compatible
Static Operation – No Clocks or Refresh
All Inputs Protected Against Static Charge
350ns Access Time
Absolute Maximum Ratings:
(Note 1)
Voltage at Any Pin
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec), T
L
Note 1. “Absolute Maximum Ratings” are those values beyond which the device may be permanently
damaged. They do not mean the device may be operated at these values.
0.5V to +7V
1W
–65
°
to +150
°
C
+300
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended Operating Conditions:
Parameter
Supply Voltage
Operating Ambient Temperature
Input Low Voltage
Input High Voltage
Symbol
V
CC
T
A
V
IL
V
IH
Test Conditions
Min
4.75
0
–0.5
2.0
Typ
–
–
–
–
Max
5.25
+70
0.8
V
CC
Unit
V
°
C
V
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE2104 | 制造商:NTE Electronics 功能描述:IC-MOS 4K DRAM 制造商:NTE Electronics 功能描述:4K X 1 SRAM 200NS 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C; Memory Size:4KB 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C |
| NTE2107 | 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes |
| NTE211 | 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 75V 1A 3-Pin(3+Tab) TO-202 |
| NTE21128 | 制造商:NTE Electronics 功能描述:IC, EPROM, 128KBIT, 250NS, DIP-28; Memory Type:EPROM - OTP; Memory Size:128Kbit; Memory Configuration:16K x 8; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:28; Access Time:250ns 制造商:NTE Electronics 功能描述:EPROM UV 128K-Bit 16K x 8 250ns 28-Pin PDIP Tube |
| NTE2114 | 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:IC SRAM 4KBIT SERIAL 300NS 18-DIP 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP 制造商:NTE Electronics 功能描述:IC-MOS 4K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP; Memory Size:4Kbit; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:18; Access Time:300ns; Operating Temperature Min:0C; Operating Temperature Max:70C 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP; Memory Size:4Kbit; Memory Configuration:(Not Available); Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:18; Access Time:300ns; Interface Type:Serial 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 4K-Bit 1K x 4-Bit 300ns 18-Pin PDIP |
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