- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363686 > NTE213 (NTE Electronics, Inc.) Germanium PNP Transistor High Power, High Gain Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | NTE213 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Germanium PNP Transistor High Power, High Gain Amplifier |
| 中文描述： | 鍺PNP晶體管高功率，高增益放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE213 |
NTE213
Germanium PNP Transistor
High Power, High Gain Amplifier
Description:
The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power,
high–gain applications in high–reliability industrial equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage, V
CES
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Thermal Resistance, Junction–to–Case, R
thJC
60V
75V
75V
40V
30A
170W
0.5W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +110
°
C
0.5
°
C/W
Elwectrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
EBF
I
CBO
I
C
= 1A, I
B
= 0, Note 1
I
C
= 300mA, V
BE
= 0, Note 1
V
CB
= 75V, I
E
= 0
V
CB
= 2V, I
E
= 0
V
CB
= 74V, I
E
= 0
V
CB
= 75V, I
E
= 0, T
C
= +71
°
C
V
BE
= 25V, I
C
= 0
V
BE
= 30V, I
C
= 0
V
BE
= 40V, I
C
= 0
V
BE
= 40V, I
C
= 0, T
C
= +71
°
C
60
–
–
V
75
–
–
V
Floating Potential
–
–
1.0
V
Collector Cutoff Current
–
0.8
0.2
mA
–
0.9
4.0
mA
–
4.0
15
mA
Emitter Cutoff Current
I
EBO
–
0.2
4.0
mA
–
0.2
4.0
mA
–
0.2
4.0
mA
–
2.7
15
mA
Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE214 | Silicon NPN Transistor Darlington Driver |
| NTE215 | Silicon NPN Transistor Darlington Driver |
| NTE216 | Silicon NPN Transistor High Speed Switch, Core Driver |
| NTE218 | Silicon PNP Transistor Audio Power Output |
| NTE221 | MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE214 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US 制造商:NTE Electronics 功能描述:T-NPN-SI DARLINGTON DR 制造商:NTE Electronics 功能描述:DARL DRVR NPN TO-3P |
| NTE2147 | 制造商:NTE Electronics 功能描述:4K X 1 SRAM 55NS 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, 55NS, 18-DIP; Memory Size:4Kbit; Memory Configuration:4K x 1; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:DIP; No. of Pins:18; Access Time:55ns; Operating Temperature Min:-10C |
| NTE215 | 制造商:NTE Electronics 功能描述:T-NPN-SI DARLINGTON DR |
| NTE216 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor High Speed Switch, Core Driver |
| NTE2164 | 制造商:NTE Electronics 功能描述:IC-MOS 64K DRAM 制造商:NTE Electronics 功能描述:IC, DRAM, 64KBIT, DIP-16; Memory Type:DRAM - MOS; Access Time:150ns; Page Size:64Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C; Memory Size:64Kbit; Package / Case:16-DIP ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:IC, DRAM, 64KBIT, DIP-16; Memory Type:DRAM - MOS; Memory Configuration:(Not Available); Access Time:150ns; Page Size:64Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。