參數(shù)資料
型號： NTE215
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Darlington Driver
中文描述： 硅NPN晶體管達(dá)林頓驅(qū)動器
文件頁數(shù)： 1/2頁
文件大?。?/td> 22K
代理商： NTE215
NTE215
Silicon NPN Transistor
Darlington Driver
Description:
The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
High DC Current Gain
Large Current Capacity and Wide ASO
Low Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110V
100V
6V
8A
12A
2.5W
60W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
t
on
t
stg
t
f
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
I
C
= 5mA, I
E
= 0
I
C
= 50mA, R
BE
=
∞
V
CC
= 50V, V
BE
= –5V,
500I
B1
= –500I
B2
= I
C
= 4A,
PW = 50
μ
s, Duty Cycle
≤
1%
–
–
0.1
mA
Emitter Cutoff Current
–
–
3.0
mA
DC Current Gain
1500
4000
–
Current Gain–Bandwidth Product
–
20
–
MHz
Collector–Emitter Saturation Voltage
–
0.9
1.5
V
Base–Emitter Saturation Voltage
–
–
2.0
V
Collector–Base Breakdown Voltage
110
–
–
V
Collector–Emitter Breakdown Voltage
100
–
–
V
μ
s
μ
s
μ
s
Turn–On Time
–
0.6
–
Storage Time
–
4.8
–
Fall Time
–
1.6
–
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