參數(shù)資料
型號(hào)： NTE221
廠商： NTE Electronics, Inc.
英文描述： MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications
中文描述： MOSFET的雙門的N甚高頻電視接收機(jī)應(yīng)用頻道
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 24K
代理商： NTE221
NTE221
MOSFET
Dual Gate, N–Channel for
VHF TV Receivers Applications
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–am-
plifier applications.
Features:
Extremely Low Feedback Capacitance
High Power Gain
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Drain–to–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate 1–to–Source Voltage, V
G1S
Continuous (DC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak AC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate 2–to–Source Voltage, V
G2S
Continuous (DC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak AC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–to–Gate Voltage, V
DG1
or V
DG2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistor Dissipation (T
A
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), T
L
Note 1. Pulse test: Pulse Width
≤
20ms, Duty Cycle
≤
15%.
0 to +20V
+1V to –8V
+20V to –8V
–8V to 40% of V
DS
–8V to +20V
+20V
50mA
400mW
2.67mW/
°
C
–65
°
to +175
°
C
–65
°
to +175
°
C
. . . . . . . .
+265
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate 1–to–Source Cutoff Voltage
V
G1S
(off)
V
G2S
(off)
I
G1SS
I
G2SS
V
DS
= 15V, V
G2S
= 4V, I
D
= 200mA
V
DS
= 15V, V
G1S
= 0, I
D
= 200mA
V
G1S
= 20V, V
G2S
= 0, V
DS
= 0
V
G2S
= 20V, V
G1S
= 0, V
DS
= 0
–
–2
–
V
Gate 2–to–Source Cutoff Voltage
–
–2
–
V
Gate 1 Leakage Current
–
–
1
nA
Gate 2 Leakage Current
–
–
1
nA
相關(guān)PDF資料
PDF描述
NTE222 Field Effect Transistor Dual Gate N-Channel MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE222 制造商:NTE Electronics 功能描述:MOSFET N-CHANNEL DUAL GATE 20V IDSS= 5-35MA TO-72 CASE GATE PROTECTED VHF AMP/MI 制造商:NTE Electronics 功能描述:DUAL N CHANNEL MOSFET 25V TO-72 制造商:NTE Electronics 功能描述:DUAL N CHANNEL MOSFET, 25V, TO-72 制造商:NTE Electronics 功能描述:MOSFET-N-CHVHF AMP/MIX 制造商:NTE Electronics 功能描述:DUAL N CHANNEL MOSFET, 25V, TO-72; Transistor Polarity:N Channel; Continuous Drain Current Id:50mA; Drain Source Voltage Vds:25V; Power Dissipation Pd:360mW; Operating Temperature Min:-65C; Operating Temperature Max:175C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 25V 0.05A 3-Pin TO-72
NTE224 制造商:NTE Electronics 功能描述:TO-39 NPN RF PWR OUT 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 2A 4-Pin(3+Tab) TO-39
NTE225 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 450V IC=1A TO-39 W/FLANNGE CASE HIGH SPEED SWITCH AND LIN 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 350V 1A 4-Pin(3+Tab) TO-39
NTE226 制造商:NTE Electronics 功能描述:TO-66 AUD PWR OUT 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 35V 2A 2-Pin(2+Tab) TO-66
NTE226MP 制造商:NTE Electronics 功能描述:
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