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參數(shù)資料
| 型號： | NTE222 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Field Effect Transistor Dual Gate N-Channel MOSFET |
| 中文描述： | 場效應(yīng)晶體管雙柵N溝道MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE222 |
NTE222
Field Effect Transistor
Dual Gate N–Channel MOSFET
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Drain Current, I
D
Reverse Gate Current, I
G
Forward Gate Current, I
GF
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering), T
L
25V
30V
50mA
–10mA
10mA
360mW
2.4mW/
°
C
1.2mW
0.8mW/
°
C
–65
°
to +175
°
C
–65
°
to +175
°
C
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+300
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Drain–Source Breakdown Voltage
V
(BR)DSX
V
(BR)G1SO
I
G1
=
±
10mA, Note 1
V
(BR)G2SO
I
G2
=
±
10mA, Note 1
I
G1SS
V
G1S
=
±
5V, V
G2S
= V
DS
= 0
I
G2SS
V
G2S
=
±
5V, V
G1S
= V
DS
= 0
V
G1S(off)
V
DS
= 15V, V
G2S
= 4V, I
D
= 20
μ
A
V
G2S(off)
V
DS
= 15V, V
G1S
= 0V, I
D
= 20
μ
A
I
D
= 10
μ
A, V
G1
= V
G2
= –5V
25
±
6
±
6
–
–
–
V
Gate 1–Source Breakdown Voltage
–
±
30
±
30
±
10
±
10
–4.0
V
Gate 2–Source Breakdown Voltage
–
V
Gate 1 Leakage Current
–
nA
Gate 2 Leakage Current
–
–
nA
Gate 1 to Source Cutoff Voltage
–0.5
–
V
Gate 2 to Source Cutoff Voltage
–0.2
–
–4.0
V
ON Characteristics
(Note 2)
Zero–Gate–Voltage Drain Current
I
DSS
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V
6
–
30
mA
Small–Signal Characteristics
Forward Transfer Admittance
|Y
fs
|
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V,
f = 1kHz, Note 3
10
–
22
mmhos
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30
μ
s, Duty Cycle
≤
2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
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