參數(shù)資料
型號(hào): NTE221
廠商: NTE Electronics, Inc.
英文描述: MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications
中文描述: MOSFET的雙門(mén)的N甚高頻電視接收機(jī)應(yīng)用頻道
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 24K
代理商: NTE221
Electrical Characteristics (Cont
d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain Current
I
DSS
g
fs
V
DS
= 13V, V
G1S
= 0, V
G2S
= 4V
V
DS
= 13V, I
D
= 10mA, V
G2S
= 4V,
f = 1kHz
18
mA
Forward Transconductance
1000
μ
mhos
Performance Characteristics:
(T
A
= +25
°
C, f = 200MHz, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Small
Signal, Short Circuit Reverse
Transfer Capacitance
C
rss
(Drain
to
Gate 1) at f = 1MHz
0.02
0.03
pF
Output Capacitance
C
oss
C
iss
r
iss
r
oss
|Y
fs
|
2.2
pF
Input Capacitance
5.5
pF
k
k
Input Resistance
1.2
Output Resistance
2.8
Magnitude of Forward Transconductance
11000
μ
mhos
deg
Phase Angle of Forward Transadmittance
46
Maximum Available Power Gain
MAG
20
dB
Maximum Usable Power Gain
(Unneutralized)
MUG
u
Note 3
20
dB
Power Gain
G
PS
NF
17.5
dB
Noise Figure
5
dB
Note 2. V
G1S
is adjusted for I
D
= 10mA, Gate 2 at AC ground potential, V
DS
= 13V, V
G2S
= 4V.
Note 3. Limited by practical design considerations.
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
°
Drain
Gate 2
Gate 1
Source/Case
.190
(4.82)
.500
(12.7)
Min
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