參數(shù)資料
型號： NTE216
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Speed Switch, Core Driver
中文描述： 硅NPN晶體管高速開關(guān)，核心動力
文件頁數(shù)： 1/2頁
文件大小： 19K
代理商： NTE216
NTE216
Silicon NPN Transistor
High Speed Switch, Core Driver
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Power Dissipation (T
A
= +25
°
C), P
D
Maximum Operating Temperature, T
opr
80V
50V
6V
1.5A
1.2W
+150
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Symbol
I
CBO
h
FE
Test Conditions
V
CB
= 60V
I
C
= 10mA, V
CE
= 1V
I
C
= 150mA, V
CE
= 1V
I
C
= 300mA, V
CE
= 1V
I
C
= 500mA, V
CE
= 1V
I
C
= 800mA, V
CE
= 2V
I
C
= 1A, V
CE
= 5V
V
CE(sat)
I
C
= 10mA
V
BE(sat)
I
C
= 10mA
C
ob
t
off
V
CC
= 30V, I
C
= 500mA,
I
B1
= I
B2
= 50mA
Min
–
30
60
40
35
20
25
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
Max
1.7
–
150
–
–
–
–
0.25
0.76
10
60
Unit
μ
A
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Capacitance
Turn–Off Time
V
V
pF
ns
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