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參數(shù)資料
| 型號： | NTE21128 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit NMOS, 128K (16K x 8) UV EPROM |
| 中文描述： | 集成電路NMOS管，128K的（16K的× 8）紫外線存儲器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 37K |
| 代理商： | NTE21128 |
NTE21128
Integrated Circuit
NMOS, 128K (16K x 8) UV EPROM
Description:
The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a
28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user
to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the
device by following the programming procedure.
Features:
Access Time: 250ns
Single 5V Supply Voltage
Low Standby Current: 40mA Max
TTL Compatible During Read and Program
Fast Programming Algorithm
Programming Voltage: 12V Typ
Absolute Maximum Ratings:
Supply Voltage, V
CC
Program Supply, V
PP
A9 Voltage, V
A9
Input or Output Voltages, V
IO
Ambient Operating Temperature, T
A
Temperature Under Bias, T
BIAS
Storage Temperature Range, T
stg
Note 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the
table “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this specification is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
–0.6V to 6.25V
–0.6V to 14V
–0.6V to 13.5V
–0.6V to 6.25V
0
°
to +70
°
C
–10
°
to +80
°
C
–65
°
to +125
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE2114 | 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:IC SRAM 4KBIT SERIAL 300NS 18-DIP 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP 制造商:NTE Electronics 功能描述:IC-MOS 4K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP; Memory Size:4Kbit; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:18; Access Time:300ns; Operating Temperature Min:0C; Operating Temperature Max:70C 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, SERIAL, 300NS, 18-DIP; Memory Size:4Kbit; Memory Configuration:(Not Available); Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:18; Access Time:300ns; Interface Type:Serial 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 4K-Bit 1K x 4-Bit 300ns 18-Pin PDIP |
| NTE2117 | 制造商:NTE Electronics 功能描述:IC-M0S 16K DRAM 制造商:NTE Electronics 功能描述:IC, DRAM, 16KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:16K x 1; Access Time:200ns; Page Size:16Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C 制造商:NTE Electronics 功能描述:IC, DRAM, 16KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:16K x 1; Access Time:200ns; Page Size:16Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C 制造商:NTE Electronics 功能描述:DRAM Chip DRAM 16K-Bit 16Kx1 5V 16-Pin DIP |
| NTE21256 | 制造商:NTE Electronics 功能描述:IC, DRAM, 256KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:256 x 1; Access Time:150ns; Page Size:256Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes |
| NTE2128 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MICROPROCESSOR & MEMORY CIRCUITS |
| NTE213 | 制造商:NTE Electronics 功能描述:TO-36 PNP HI-PWR/GN 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 60V 30A 3-Pin TO-36 |
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