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參數(shù)資料
| 型號： | NTE2114 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit MOS, Static 4K RAM, 300ns |
| 中文描述： | 集成電路馬鞍山，靜態(tài)4K的內(nèi)存，為300ns |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | NTE2114 |
NTE2114
Integrated Circuit
MOS, Static 4K RAM, 300ns
Description:
The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon–
gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for
operation. The data is read out nondestructively and has the same polarity as the input data. Com-
mon input/output pins are provided.
The separate chip select input (CS) allows easy memory expansion by OR–tying individual devices
to a data bus.
Features
All Inputs and Outputs Directly TTL Compatible
Static Operation: No Clocks or Refreshing Required
Low Power: 225mW Typ
High Speed: Down to 300ns Access Time
TRI–STATE Output for Bus interface
Common Data In and Data Out Pins
Single 5V Supply
Standard 18–Lead DIP Package
Absolute Maximum Ratings:
Voltage at Any Pin
Power Dissipation, P
D
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 10sec), T
L
–0.5V to +7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W
–65
°
to +150
°
C
+300
°
C
Recommended Operating Conditions:
Parameter
Supply Voltage
Ambient temperature
Symbol
V
CC
T
A
Test Conditions
Min
4.75
0
Max
5.25
+70
Units
V
°
C
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