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參數(shù)資料
| 型號(hào)： | NTE210 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors General Purpose Output & Driver |
| 中文描述： | 硅互補(bǔ)晶體管通用輸出 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | NTE210 |
NTE210 (NPN) & NTE211 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack-
age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
TO202 Type Package: 2W Free Air Dissipation @ T
A
= +25
°
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage, V
CES
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak (Note 1)
Total Power Dissipation (T
A
= +25
°
C, Note 2), P
D
Derate Above 25
°
C
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
Maximum Thermal Resistance, Junction–to–Ambient, R
thJA
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Note 1. Pulse Test: Pulse Width
≤
300
μ
s.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T
A
= +25
°
C.
75V
90V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67W
13.3mW/
°
C
6.25W
50mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
+260
°
C
75
°
C/W
20
°
C/W
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
CES
I
EBO
I
C
= 10mA, I
B
= 0
V
CE
= 90V
V
EB
= 5V
75
–
–
V
Collector Cutoff Current
–
–
100
nA
Emitter Cutoff Current
–
–
100
nA
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|---|---|
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| NTE213 | Germanium PNP Transistor High Power, High Gain Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2102 | 制造商:NTE Electronics 功能描述:IC-MOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 350NS, 16-DIP; Memory Size:1Kbit; Memory Configuration:1K x 1; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:16; Access Time:350ns; Operating Temperature Min:0C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 1K x 1 350ns 16-Pin PDIP |
| NTE2104 | 制造商:NTE Electronics 功能描述:IC-MOS 4K DRAM 制造商:NTE Electronics 功能描述:4K X 1 SRAM 200NS 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C; Memory Size:4KB 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C |
| NTE2107 | 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; Operating Temperature Min:0C; Operating Temperature Max:70C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:IC, DRAM, 4KBIT, DIP-16; Memory Type:DRAM - NMOS; Memory Configuration:4K x 1; Access Time:200ns; Page Size:4Kbit; Memory Case Style:DIP; No. of Pins:16; IC Interface Type:(Not Available); Operating Temperature Min:0C ;RoHS Compliant: Yes |
| NTE211 | 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 75V 1A 3-Pin(3+Tab) TO-202 |
| NTE21128 | 制造商:NTE Electronics 功能描述:IC, EPROM, 128KBIT, 250NS, DIP-28; Memory Type:EPROM - OTP; Memory Size:128Kbit; Memory Configuration:16K x 8; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:28; Access Time:250ns 制造商:NTE Electronics 功能描述:EPROM UV 128K-Bit 16K x 8 250ns 28-Pin PDIP Tube |
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