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參數(shù)資料
| 型號： | NTE20 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output |
| 中文描述： | 硅晶體管互補高功率，電壓低集電極飽和輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE20 |
NTE20 (NPN) & NTE21 (PNP)
Silicon Complementary Transistors
High Power, Low Collector Saturation Voltage
Power Output
Features:
High Power in a Compact ATR Package: P
O
= 1W
Applications:
Regulated Power Supplies
1 to 2W Output Stages
Drivers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
NTE20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE21
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V
32V
5V
2A
2.5A
3.0A
1W
+135
°
C
–55
°
to +135
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= 1mA
I
C
= 50
μ
A
I
E
= 50
μ
A
V
CB
= 20V
V
EB
= 4V
V
CE
= 3V, I
C
= 500mA
I
C
= 2A, I
C
= 200mA
V
CE
= 5V, I
C
= 500mA
V
CB
= 10V, f = 1MHz
32
–
–
V
Collector–Base Breakdown Voltage
40
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
1
Emitter Cutoff Current
–
–
1
DC Current Gain
120
–
270
Collector Saturation Voltage
–
500
–
mV
Transition Frequency
–
100
–
MHz
Output Capacitance
–
50
–
pF
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