參數(shù)資料
型號(hào)： NTD4809N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30 V, 58 A(30V, 58A, 功率MOSFET)
中文描述： 功率MOSFET 30五，58甲（30V的，58A條，功率MOSFET的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 81K
代理商： NTD4809N
NTD4809N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
R
JCTAB
R
JA
R
JA
2.9
°
C/W
JunctiontoTAB (Drain)
3.5
JunctiontoAmbient Steady State (Note 1)
74
JunctiontoAmbient Steady State (Note 2)
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
116
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
25
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.7
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 to
11.5 V
I
D
= 30 A
7.0
9.0
m
I
D
= 15 A
7.0
V
GS
= 4.5 V
I
D
= 30 A
12
14
I
D
= 15 A
11
Forward Transconductance
gFS
V
DS
= 15 V, I
D
= 15 A
9.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
1456
pF
Output Capacitance
C
oss
315
Reverse Transfer Capacitance
C
rss
200
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
11
13
nC
Threshold Gate Charge
Q
G(TH)
2.5
GatetoSource Charge
Q
GS
4.8
GatetoDrain Charge
Q
GD
5.0
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
25
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
12.3
ns
Rise Time
t
r
21.3
TurnOff Delay Time
t
d(off)
15.1
Fall Time
t
f
5.3
TurnOn Delay Time
t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
7.0
ns
Rise Time
t
r
22.7
TurnOff Delay Time
t
d(off)
25.3
Fall Time
t
f
2.8
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4809N-1G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4809N-35G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4809N-35H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTD4809NA-1G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4809NA-35G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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