參數(shù)資料
型號： NTD4806N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30 V, 76 A(30V, 76A, 功率MOSFET)
中文描述： 功率MOSFET 30五，76甲（30V的，76A號，功率MOSFET的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 81K
代理商： NTD4806N
NTD4806N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
R
JCTAB
R
JA
R
JA
2.5
°
C/W
JunctiontoTab (Drain)
3.5
JunctiontoAmbient Steady State (Note 1)
70
JunctiontoAmbient Steady State (Note 2)
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
113
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
27
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
T
J
= 125
°
C
20 V
1.0
A
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature
Coefficient
6.0
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 to 11.5 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
4.9
6.0
m
4.8
V
GS
= 4.5 V
7.9
9.4
7.5
Forward Transconductance
gFS
V
DS
= 15 V, I
D
= 15 A
14
S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
2142
pF
Output Capacitance
480
Reverse Transfer Capacitance
251
Total Gate Charge
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
15
23
nC
Threshold Gate Charge
3.0
GatetoSource Charge
7.0
GatetoDrain Charge
7.0
Total Gate Charge
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
37
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
13.9
ns
Rise Time
29.7
TurnOff Delay Time
18.3
Fall Time
7.8
TurnOn Delay Time
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
8.5
ns
Rise Time
23.8
TurnOff Delay Time
26
Fall Time
4.7
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4806N-1G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4806N-1H 制造商:ON Semiconductor 功能描述:
NTD4806N-35G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4806NA-1G 功能描述:MOSFET NFET DPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4806NA-35G 功能描述:MOSFET NFET IPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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