參數資料
型號： NTD4808N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數： 1/8頁
文件大?。?/td> 81K
代理商： NTD4808N
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 0
1
Publication Order Number:
NTD4808N/D
NTD4808N
Power MOSFET
30 V, 63 A, Single NChannel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current R
JA
(Note 1)
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
Power Dissipation
R
JC
(Note 1)
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 17 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
DSS
V
GS
I
D
30
20
12
V
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
9.5
T
A
= 25
°
C
P
D
2.0
W
T
A
= 25
°
C
ID
9.8
A
T
A
= 85
°
C
7.5
T
A
= 25
°
C
P
D
1.3
W
T
C
= 25
°
C
I
D
63
A
T
C
= 85
°
C
49
T
C
= 25
°
C
P
D
54.6
W
t
p
=10 s
T
A
= 25
°
C
I
DM
126
A
T
A
= 25
°
C
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
45
A
°
C
55 to
+175
45
6
144.5
A
V/ns
mJ
T
L
260
°
C
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
8.0 m @ 10 V
63 A
12.4 m @ 4.5 V
G
S
NCHANNEL MOSFET
D
1 2
3
4
DPAK
CASE 369C
STYLE 2
3 IPAK
(STRAIGHT LEAD)
CASE 369AC
DPAK
CASE 369D
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
Y
4
0
1
Gate
2
Drain3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
4
0
Y
4
0
Y
WW
4808N = Device Code
G
= PbFree Package
= Year
= Work Week
123
4
123
4
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相關代理商/技術參數
參數描述
NTD4808N-1G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4808N-35G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4808NT4G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4809N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
NTD4809N-1G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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