參數(shù)資料
型號： NTD4808N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 81K
代理商： NTD4808N
NTD4808N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
2.75
°
C/W
JunctiontoTAB (Drain)
R
JCTAB
3.5
JunctiontoAmbient – Steady State (Note 1)
R
JA
73.5
JunctiontoAmbient – Steady State (Note 2)
R
JA
116
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
27
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.6
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 to 11.5 V
I
D
= 30 A
6.7
8.0
m
I
D
= 15 A
6.6
V
GS
= 4.5 V
I
D
= 30 A
10.3
12.4
I
D
= 15 A
9.8
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
11.4
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1538
pF
Output Capacitance
C
OSS
334
Reverse Transfer Capacitance
C
RSS
180
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
11.3
13
nC
Threshold Gate Charge
Q
G(TH)
1.6
GatetoSource Charge
Q
GS
4.9
GatetoDrain Charge
Q
GD
4.9
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
26
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
= 3.0
13
ns
Rise Time
t
r
102
TurnOff Delay Time
t
d(OFF)
11
Fall Time
t
f
5.6
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4808N-1G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4808N-35G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4808NT4G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4809N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
NTD4809N-1G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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