參數(shù)資料
型號(hào)： NTD30N02T4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 30 Amps, 24 Volts
中文描述： 30 A, 24 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 53K
代理商： NTD30N02T4
NTD30N02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
26.5
25.5
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
0.8
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
2.1
4.1
3.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 15 Adc)
R
DS(on)
11.2
20
14.5
14.5
24
m
Forward Transconductance (Note 3) (V
DS
= 10 Vdc, I
D
= 15 Adc)
g
FS
20
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
1000
pF
Output Capacitance
C
oss
425
Transfer Capacitance
C
rss
175
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
7.0
15
ns
Rise Time
= 20 Vdc, I
= 30 Adc,
(V
DD
D
30 Adc,
V
GS
= 10 Vdc, R
G
= 2.5
)
t
r
28
55
TurnOff Delay Time
t
d(off)
22
35
Fall Time
t
f
12
20
TurnOn Delay Time
t
d(on)
12.5
ns
Rise Time
(V
= 20 Vdc, I
DD
D
= 15 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5
)
t
r
115
TurnOff Delay Time
t
d(off)
15
Fall Time
t
f
17
Gate Charge
(V
DS
= 20 Vdc, I
D
= 30 Adc,
V
GS
= 4.5 Vdc) (Note 3)
Q
T
14.4
20
nC
Q
1
4.0
Q
2
8.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 15 Adc, V
GS
= 0 Vdc)
(I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.95
1.10
0.80
1.2
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 3)
t
rr
30
ns
t
a
14.5
t
b
15.5
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
0.013
C
相關(guān)PDF資料
PDF描述
NTD30N02 Power MOSFET 30Amps, 24Volts N-Channel DPAK(30A, 24V，N通道，DPAK封裝的功率MOSFET)
NTD4806N Power MOSFET 30 V, 76 A(30V, 76A, 功率MOSFET)
NTD4808N Power MOSFET(功率MOSFET)
NTD4809N Power MOSFET 30 V, 58 A(30V, 58A, 功率MOSFET)
NTD4815N Power MOSFET 30 V, 35 A(30V, 35A, 功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD30N02T4G 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD32 制造商:OTAX Corporation 功能描述:Tape & Reel
NTD32N06 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD32N06/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 32 Amps， 60 Volts
NTD32N06-001 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*