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參數(shù)資料
| 型號(hào)： | NTD30N02 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 30Amps, 24Volts N-Channel DPAK(30A, 24V，N通道，DPAK封裝的功率MOSFET) |
| 中文描述： | 30 A, 24 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | NTD30N02 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 2
1
Publication Order Number:
NTD30N02/D
NTD30N02
Power MOSFET
30 Amps, 24 Volts
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Operating and Storage Temperature Range
V
DSS
V
GS
24
20
Vdc
Vdc
Adc
10
μ
s)
I
D
I
DM
P
D
30
100
75
55 to
150
50
Apk
W
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 10 A, R
G
= 25
)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
mJ
R
θ
JC
R
θ
JA
R
θ
JA
1.65
67
120
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
T
L
260
°
C
30 AMPERES
24 VOLTS
R
DS(on)
= 11.2 m
(Typ.)
NChannel
D
S
G
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTD30N02
DPAK
75 Units/Rail
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING
DIAGRAM
D30N02
Y
WW
= Device Code
= Year
= Work Week
NTD30N02T4
DPAK
2500 Tape & Reel
1 2
3
4
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Gate
3
Source
2
Drain
4
Drain
Y
D
N
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD30N02G | 功能描述:MOSFET NFET 24V 0.014R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD30N02T4 | 功能描述:MOSFET N-CH 24V 30A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTD30N02T4G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD32 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTD32N06 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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