參數(shù)資料
型號： NTD3055-150
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60V，N通道，DPAK封裝的功率MOSFET)
中文描述： 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 67K
代理商： NTD3055-150
NTD3055150
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70.2
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
3.0
6.4
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc)
R
DS(on)
122
150
m
Static DraintoSource OnVoltage (Note 3)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc, T
J
= 150
°
C)
V
DS(on)
1.4
1.1
1.9
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc)
g
FS
5.4
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
200
280
pF
Output Capacitance
(V
DS
= 25 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
oss
70
100
Transfer Capacitance
C
rss
26
40
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
11.2
25
ns
Rise Time
(V
DD
= 48 Vdc, I
= 9.0 Adc,
V
= 10 Vdc,
R
= 9.1 ) (Note 3)
G
t
r
37.1
80
TurnOff Delay Time
t
d(off)
12.2
25
Fall Time
t
f
23
50
Gate Charge
Q
T
7.1
15
nC
(V
DS
= 48 Vdc, I
= 9.0 Adc,
GS
= 10 Vdc) (Note 3)
Q
1
1.7
Q
2
3.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 9.0 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 19 Adc, V
GS
= 0 Vdc, T
J
=
150
°
C)
V
SD
0.98
0.86
1.20
Vdc
Reverse Recovery Time
t
rr
28.9
ns
(I
S
= 9.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
21.6
t
b
7.3
Reverse Recovery Stored Charge
Q
RR
0.036
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料
PDF描述
NTD3055L104 Power MOSFET
NTD3055L104G Power MOSFET
NTD3055L104T4 Power MOSFET
NTD3055L104T4G Power MOSFET
NTD3055-150T4 Power MOSFET 9.0 A, 60 V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD3055-150/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 9.0 Amps， 60 Volts
NTD3055-150-1 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150-1G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150T4 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*