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參數(shù)資料
| 型號： | NTD12N10-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| 中文描述： | 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NTD12N10-1 |
NTD12N10
http://onsemi.com
3
24
12
8
4
10
7
6
5
4
3
2
1
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0
0
8
9
16
20
I
D
,
Figure 1. OnRegion Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
24
12
8
4
10
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
0
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
0.5
0.4
0.3
0.1
8
4
0
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
8
4
0
0.175
0.15
0.125
0.1
0
0.2
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
3
1.5
1
0.5
175
125
100
75
50
25
0
25
50
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
30
20
1000
100
10
0
10000
Figure 6. DraintoSource Leakage Current
versus Voltage
I
D
,
R
D
,
24
12
0.2
R
D
,
24
R
D
I
D
,
40
100
8
9
20
60
50
70
80
90
V
GS
= 10 V
4.5 V
5 V
5.5 V
7 V
6 V
9 V
T
J
= 25
°
C
6.5 V
7.5 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 10 V
T
J
= 25
°
C
V
GS
= 10 V
I
D
= 6 A
V
GS
= 10 V
T
J
= 150
°
C
V
GS
= 0 V
T
J
= 100
°
C
16
20
8 V
16
20
V
GS
= 15 V
12
16
V
DS
≥
10 V
2
2.5
150
TYPICAL ELECTRICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD12N10-1G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD12N10T4 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10T4G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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