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參數(shù)資料
| 型號： | NTD14N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 14 Amps, 25Volts N-Channel DPAK(14A, 25 V，N通道，DPAK封裝的功率MOSFET) |
| 中文描述： | 11.4 A, 25 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | NTD14N03R |
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 4
1
Publication Order Number:
NTD14N03R/D
NTD14N03R
Power MOSFET
14 Amps, 25 Volts
NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
25
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
= 25
°
C, Chip
Continuous @ T
A
= 25
°
C, Limited by Package
Single Pulse (tp
≤
10 s)
R
JC
P
D
I
D
I
D
I
D
6.0
20.8
14
11.4
28
°
C/W
W
A
A
A
Thermal Resistance, JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
80
1.56
3.1
°
C/W
W
A
Thermal Resistance, JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
120
1.04
2.5
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
http://onsemi.com
14 AMPERES, 25 VOLTS
R
DS(on)
= 70.4 m (Typ)
D
S
G
NCHANNEL
MARKING DIAGRAM
& PIN ASSIGNMENTS
14N03
Y
WW
= Device Code
= Year
= Work Week
CASE 369C
DPAK
(Surface Mount)
STYLE 2
Y
T
N
4 Drain
3
Source
1
Gate
2
Drain
CASE 369D
DPAK3
(Straight Lead)
STYLE 2
1 2
3
4
4 Drain
1
Gate
2
Drain
3
Source
4
1
2
3
Y
T
N
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD14N03R_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 14 Amps, 25 Volts N-Channel DPAK |
| NTD14N03R-001 | 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD14N03R-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 14 Amps, 25 Volts N−Channel DPAK |
| NTD14N03R-1G | 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD14N03RG | 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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