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參數(shù)資料
| 型號(hào)： | NTD20N03L27 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 20 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | NTD20N03L27 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, NChannel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The draintosource diode has a ideal fast but soft recovery.
Features
PbFree Packages are Available
UltraLow R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many Applications
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage
Continuous
NonRepetitive (t
p
Drain Current
Continuous @ T
A
= 25 C
Continuous @ T
A
= 100 C
Single Pulse (t
p
V
DSS
V
DGR
30
30
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
20
24
10 s)
I
D
I
D
I
DM
P
D
20
16
60
74
0.6
1.75
55 to
150
288
Adc
Apk
W
W/
°
C
W
°
C
Total Power Dissipation @ T
A
= 25 C
Derate above 25
°
C
Total Power Dissipation @ T
C
= 25
°
C (Note 1)
Operating and Storage Temperature Range
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 24 A, V
DS
= 34 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
E
AS
mJ
R
JC
R
JA
R
JA
T
L
1.67
100
71.4
260
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
°
C
20 A, 30 V, R
DS(on)
= 27 m
NChannel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
20N3L
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
1 2
3
4
DPAK3
CASE 369D
STYLE 2
123
4
MARKING
DIAGRAMS
A
2
N
1
Gate
3
Source
2
Drain
4
Drain
A
2
N
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD20N03L27/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Power MOSFET 20 Amps， 30 Volts |
| NTD20N03L27-001 | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N03L27-1 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET |
| NTD20N03L27-1G | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N03L27G | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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