參數(shù)資料
型號： NTD24N06L
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V，邏輯電平，N通道，DPAK封裝的功率MOSFET)
中文描述： 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 1/8頁
文件大小： 81K
代理商： NTD24N06L
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 2
1
Publication Order Number:
NTD24N06L/D
NTD24N06L
Power MOSFET
24 Amps, 60 Volts
Logic Level, NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
10 ms)
V
GS
V
GS
15
20
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
24
10
72
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
62.5
0.42
1.88
1.36
W
W/
°
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 18 A, V
DS
= 60 Vdc)
E
AS
162
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
2.4
80
110
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
http://onsemi.com
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
24N6L
G
= Year
= Work Week
= Device Code
= PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Y
2
N
1 2
3
4
Y
2
N
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
123
4
24 AMPERES, 60 VOLTS
R
DS(on)
= 0.036 Typ)
NChannel
D
S
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD24N06L-001 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06L-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 24A I(D) | TO-252AA
NTD24N06L-1G 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06LG 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06LT4 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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