參數(shù)資料
型號： NTD24N06L
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V，邏輯電平，N通道，DPAK封裝的功率MOSFET)
中文描述： 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 2/8頁
文件大小： 81K
代理商： NTD24N06L
NTD24N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
= 0 Vdc, I
= 250 Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 Adc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 12 Adc)
Static DraintoSource OnResistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 20 Adc)
(V
GS
= 5.0 Vdc, I
D
= 24 Adc)
(V
GS
= 5.0 Vdc, I
D
= 12 Adc, T
J
= 150
°
C)
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 12 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
V
(BR)DSS
60
71.9
69.6
Vdc
mV/
°
C
I
DSS
1.0
10
Adc
I
GSS
±
100
nAdc
V
GS(th)
1.0
1.7
5.0
2.0
Vdc
mV/
°
C
R
DS(on)
36
36
45
m
V
DS(on)
0.9
0.9
0.78
1.2
Vdc
g
FS
19
mhos
(V
DS
= 25 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
814
258
80
1140
360
115
pF
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(V
DD
= 30 Vdc, I
= 24 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 ) (Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
9.4
97
23
52
16
3.4
11
20
200
50
100
32
ns
(V
DS
= 48 Vdc, I
= 24 Adc,
V
GS
= 5.0 Vdc) (Note 3)
nC
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
= 24 Adc, V
= 0 Vdc)
(I
S
= 24 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.93
0.95
0.86
49
30
20
0.084
1.1
Vdc
Reverse Recovery Time
(I
S
= 24 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
rr
t
a
t
b
ns
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
C
ORDERING INFORMATION
Device
Package
DPAK
DPAK
(PbFree)
Shipping
75 Units / Rail
75 Units / Rail
NTD24N06L
NTD24N06LG
NTD24N06L1
NTD24N06L1G
DPAK (Straight Lead)
DPAK (Straight Lead)
(PbFree)
75 Units / Rail
75 Units / Rail
NTD24N06LT4
NTD24N06LT4G
DPAK
DPAK
(PbFree)
2500 Units / Tape & Reel
2500 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NTD2955T4G Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD24N06L-001 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06L-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 24A I(D) | TO-252AA
NTD24N06L-1G 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06LG 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD24N06LT4 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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