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參數(shù)資料
| 型號(hào)： | NTD2955T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 12 A, 60 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTD2955T4 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 7
1
Publication Order Number:
N
TD2955/D
NTD2955
Power MOSFET
60 V, 12 A, PChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for lowvoltage, high
speed switching applications in power supplies, converters, and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
Avalanche Energy Specified
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Designed for LowVoltage, HighSpeed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
≤
10 ms)
Drain Current
Drain Current
Continuous @ T
a
= 25
°
C
Drain Current
Single Pulse (t
p
≤
10 ms)
Total Power Dissipation @ T
a
= 25
°
C
Operating and Storage Temperature
Range
V
GS
V
GSM
±
20
±
25
Vdc
Vpk
I
D
I
DM
12
36
Adc
Apk
P
D
55
W
T
J
, T
stg
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 3.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
216
mJ
R
JC
R
JA
R
JA
2.73
71.4
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in
2
).
D
S
G
PChannel
http://onsemi.com
60 V
155 m @ 10 V, 6 A
R
DS(on)
TYP
12 A
I
D
MAX
V
(BR)DSS
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
= Work Week
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK3
CASE 369D
STYLE 2
123
4
A
N
A
N
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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|---|---|
| NTD2955T4G | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD2955T4G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 12A D-PAK |
| NTD2955T4G-CUT TAPE | 制造商:ON 功能描述:NTD Series P-Channel 60 V 155 mOhm 55 W Tab Mount Power MOSFET - TO-252 |
| NTD30 | 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
| NTD3055-094 | 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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