參數(shù)資料
型號(hào): NTD2955T4
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET
中文描述: 12 A, 60 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369C-01, DPAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 64K
代理商: NTD2955T4
NTD2955
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
0
1
2
3
4
5
0
15
25
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
2
4
6
8
10
0
10
18
24
22
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
T
J
= 25
°
C
V
DS
10 V
T
J
= 55
°
C
25
°
C
125
°
C
V
GS
= 10 V
9 V
8 V
6 V
5 V
7 V
5
10
20
3
5
7
9
4
12
6
7
8
9
10
16
6
0
3
6
15
24
0
0.10
0.20
0.30
0
6
21
24
0.050
0.075
0.200
0.250
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25
°
C
V
GS
= 10 V
T
J
= 125
°
C
25
°
C
55
°
C
12
21
3
12
15
0.05
0.15
0.25
0.100
0.225
0.125
V
GS
= 10 V
15 V
18
9
0.35
0.40
0.175
9
18
0.150
50
0.6
0.8
1.2
1.6
5
20
50
60
1
100
1000
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
25
0
25
50
75
100
125
150
V
GS
= 0 V
V
GS
= 10 V
I
D
= 6 A
15
30
40
1.0
1.4
T
J
= 125
°
C
175
0.4
0.2
0
1.8
2.0
100
°
C
6.5 V
5.5 V
9.5 V
8
2
20
14
0.45
0.50
10
10
25
55
35
45
D
D
R
D
)
R
D
)
R
D
D
,
相關(guān)PDF資料
PDF描述
NTD2955T4G Power MOSFET
NTD3055-094 Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60V,N通道,DPAK封裝的功率MOSFET)
NTD30N02T4 Power MOSFET 30 Amps, 24 Volts
NTD30N02 Power MOSFET 30Amps, 24Volts N-Channel DPAK(30A, 24V,N通道,DPAK封裝的功率MOSFET)
NTD4806N Power MOSFET 30 V, 76 A(30V, 76A, 功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD2955T4G 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD2955T4G 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 12A D-PAK
NTD2955T4G-CUT TAPE 制造商:ON 功能描述:NTD Series P-Channel 60 V 155 mOhm 55 W Tab Mount Power MOSFET - TO-252
NTD30 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD3055-094 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube