參數(shù)資料
型號(hào)： NTD15N06
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 15 Amps, 60 Volts
中文描述： 15 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 93K
代理商： NTD15N06
Semiconductor Components Industries, LLC, 2003
September, 2003 Rev. 1
1
Publication Order Number:
NTD15N06/D
NTD15N06
Power MOSFET
15 Amps, 60 Volts
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
15
10
45
Adc
Apk
Total Power Dissipation @ T
J
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
48
0.32
2.1
1.5
W
W/
°
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, L = 1.0 mH,
I
L(pk)
= 11 A, V
DS
= 60 Vdc)
E
AS
61
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
3.13
71.4
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
15 AMPERES
60 VOLTS
R
DS(on)
= 76 m TYP)
Device
Package
Shipping
ORDERING INFORMATION
NTD15N06
DPAK
75 Units/Rail
http://onsemi.com
NChannel
D
S
G
NTD15N061
DPAK
Straight Lead
75 Units/Rail
NTD15N06T4
DPAK
2500/Tape & Reel
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING DIAGRAMS
15N06
Y
WW
Device Code
= Year
= Work Week
Y
1
1 2
3
4
Y
1
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
Style 2
123
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD15N06-001 功能描述:MOSFET N-CH 60V 15A IPAK RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTD15N06-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252AA
NTD15N06AV1 制造商:ON Semiconductor 功能描述:
NTD15N06AVT4 制造商:Rochester Electronics LLC 功能描述:- Bulk
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