參數(shù)資料
型號： NTD12N10-1
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK
中文描述： 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369D-01, DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 77K
代理商： NTD12N10-1
NTD12N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
135
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 125
°
C)
I
DSS
5.0
50
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
3.1
7.5
4.0
Vdc
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
(V
GS
= 10 Vdc, I
D
= 6.0 Adc, T
J
= 125
°
C)
R
DS(on)
0.130
0.250
0.165
0.400
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 12 Adc)
V
DS(on)
1.62
2.16
Vdc
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 6.0 Adc)
g
FS
7.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
390
550
pF
Output Capacitance
C
oss
115
160
Reverse Transfer Capacitance
C
rss
35
70
SWITCHING CHARACTERISTICS
(Notes 4 & 5)
TurnOn Delay Time
t
d(on)
11
20
ns
Rise Time
= 80 Vdc, I
= 12 Adc,
(V
DD
D
12 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 )
t
r
30
60
TurnOff Delay Time
t
d(off)
22
40
Fall Time
t
f
32
60
Total Gate Charge
(V
DS
= 80 Vdc, I
D
= 12 Adc,
V
GS
= 10 Vdc)
Q
tot
14
20
nC
GatetoSource Charge
Q
gs
3.0
GatetoDrain Charge
Q
gd
7.0
BODYDRAIN DIODE RATINGS
(Note 4)
Diode Forward OnVoltage
(I
S
= 12 Adc, V
GS
= 0 Vdc)
(I
S
= 12 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.95
0.80
1.0
Vdc
Reverse Recovery Time
(I
S
= 12 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
85
ns
t
a
60
t
b
28
Reverse Recovery Stored Charge
4. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
Q
RR
0.3
C
ORDERING INFORMATION
Device
Package
Shipping
NTD12N10
NTD12N101
NTD12N10T4
NTD12N10T4G
DPAK
DPAK3
DPAK
DPAK
(PbFree)
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD12N10-1G 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD12N10G 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD12N10G 制造商:ON Semiconductor 功能描述:MOSFET
NTD12N10T4 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD12N10T4G 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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