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參數(shù)資料
| 型號： | NTD12N10-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| 中文描述： | 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NTD12N10-1 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 6
1
Publication Order Number:
NTD12N10/D
NTD12N10
Preferred Device
Power MOSFET
12 Amps, 100 Volts NChannel
EnhancementMode DPAK
Features
PbFree Package is Available
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Mounting Information Provided for the DPAK Package
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
100
Vdc
DraintoSource Voltage (R
GS
= 1.0 M )
V
DGR
100
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
20
±
30
Vdc
Vpk
Drain Current Continuous @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
=100
°
C
Drain Current
Pulsed (Note 3)
I
D
I
D
I
DM
12
7.0
36
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
56.6
0.38
1.76
1.28
W
W/
°
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
= 12 Apk, L = 1.0 mH, R
G
= 25 )
E
AS
75
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
R
JC
R
JA
R
JA
2.65
85
117
°
C/W
Maximum Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
NChannel
D
S
G
Preferred
devices are recommended choices for future use
and best overall value.
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
T12N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
1 2
3
4
DPAK3
CASE 369D
(Straight Lead)
STYLE 2
123
4
MARKING
DIAGRAMS
100 V
165 m @ 10 V
R
DS(on)
TYP
12 A
I
D
MAX
V
(BR)DSS
A
T
N
1
Gate
3
Source
2
Drain
4
Drain
A
T
N
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD12N10-1G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD12N10T4 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10T4G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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