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參數(shù)資料
| 型號： | NTB75N03RT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 |
| 中文描述： | 75 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NTB75N03RT4 |
NTB75N03R, NTP75N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
= 0 V
, I
= 250 A
)
Temperature Coefficient (Positive)
V
(br)DSS
25
28
20.5
V
dc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 150
°
C)
I
DSS
1.0
10
A
dc
GateBody Leakage Current
(V
GS
=
±
20 V
dc
, V
DS
= 0 V
dc
)
I
GSS
±
100
nA
dc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 A
)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
4.0
2.0
V
dc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
R
DS(on)
8.1
5.6
13
8.0
m
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
g
FS
27
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
1333
pF
Output Capacitance
(V
DS
= 20 V
dc
, V
GS
= 0 V,
f = 1 MHz)
C
oss
600
Transfer Capacitance
C
rss
218
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
6.9
ns
Rise Time
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 30 A
dc
, R
G
= 3
t
r
1.3
TurnOff Delay Time
)
t
d(off)
18.4
Fall Time
t
f
5.5
Gate Charge
Q
T
13.2
nC
(V
GS
= 5 V
dc
, I
D
= 30 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
Q
1
3.3
Q
2
6.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
V
SD
V
dc
(I
= 20 A
, V
= 0 V
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125
(I
°
C)
0.86
0 73
0.73
1.2
S
dc
GS
dc
) (Note 3)
Reverse Recovery Time
t
rr
15.6
ns
(I
S
= 35 A
, V
= 0 V
,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
13.8
t
b
1.78
Reverse Recovery Stored Charge
Q
RR
0.004
C
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
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| NTB75N03RT4G | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N06 | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N06G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N06L | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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