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參數(shù)資料
| 型號： | NTB75N06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 79K |
| 代理商： | NTB75N06 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
NTP75N06/D
NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, NChannel
TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
75
50
225
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C
P
D
214
1.4
2.4
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
E
AS
844
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
0.7
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
75 AMPERES, 60 VOLTS
R
DS(on)
= 9.5 m
NChannel
D
S
G
TO220
CASE 221A
STYLE 5
12
3
4
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
75N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
D
2
PAK
CASE 418B
STYLE 2
MARKING
DIAGRAMS
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB75N06G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N06L | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTB75N06LG | 功能描述:MOSFET NFET 60V .012R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N06LT4 | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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