參數(shù)資料
型號(hào)： NTB75N06T4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET
中文描述： 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 79K
代理商： NTB75N06T4
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
NTP75N06/D
NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, NChannel
TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
75
50
225
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C
P
D
214
1.4
2.4
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
E
AS
844
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
0.7
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
75 AMPERES, 60 VOLTS
R
DS(on)
= 9.5 m
NChannel
D
S
G
TO220
CASE 221A
STYLE 5
12
3
4
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
75N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
D
2
PAK
CASE 418B
STYLE 2
MARKING
DIAGRAMS
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
相關(guān)PDF資料
PDF描述
NTB75N06T4G Power MOSFET
NTP75N06 Power MOSFET
NTP75N06D Power MOSFET
NTP75N06G Power MOSFET
NTD12N10-1 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTB75N06T4G 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB794 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-126VAR
NTB795 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-126VAR
NTB7A16 功能描述:LCD 觸摸面板 RoHS:否 制造商:3M Touch Systems 類型:P-MVA 大小:22 in 絕緣電阻: 封裝:Bulk
NTB85N03 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*