參數(shù)資料
型號(hào): NTB75N06L
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 75 Amps, 60 Volts, Logic Level N–Channel TO–220(75A, 60 V,邏輯電平,N通道,TO220封裝的功率MOSFET)
中文描述: 75 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-04, D2PAK-3
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 79K
代理商: NTB75N06L
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 1
1
Publication Order Number:
NTP75N06L/D
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GS
20
15
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
75
50
225
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
214
1.4
2.4
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
E
AS
844
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
R
JC
R
JA
0.7
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
75 AMPERES, 60 VOLTS
R
DS(on)
= 11 m
NChannel
D
S
G
TO220AB
CASE 221A
STYLE 5
12
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= PbFree Package
NTP75N06L
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N06LG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
http://onsemi.com
相關(guān)PDF資料
PDF描述
NTP75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N–Channel TO–220(75A, 60 V,邏輯電平,N通道,TO220封裝的功率MOSFET)
NTB75N06 Power MOSFET
NTB75N06G Power MOSFET
NTB75N06T4 Power MOSFET
NTB75N06T4G Power MOSFET
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NTB75N06LT4G 功能描述:MOSFET NFET 60V .012R TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB75N06T4 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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