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參數(shù)資料
| 型號： | NTB75N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 60 Volts, Logic Level N–Channel TO–220(75A, 60 V,邏輯電平，N通道，TO220封裝的功率MOSFET) |
| 中文描述： | 75 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 79K |
| 代理商： | NTB75N06L |
NTP75N06L, NTB75N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
72
74
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.58
6.0
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc)
R
DS(on)
9.0
11
m
Static DraintoSource OnVoltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 75 Adc)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc, T
J
= 150
°
C)
V
DS(on)
0.75
0.61
0.99
Vdc
Forward Transconductance (Note 2) (V
DS
= 15 Vdc, I
D
= 37.5 Adc)
g
FS
55
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
3122
4370
pF
Output Capacitance
C
oss
1029
1440
Transfer Capacitance
C
rss
276
390
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
(V
DD
= 30 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 ) (Note 2)
t
d(on)
22
32
ns
Rise Time
t
r
265
370
TurnOff Delay Time
t
d(off)
113
160
Fall Time
t
f
170
240
Gate Charge
(V
DS
= 48 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc) (Note 2)
Q
T
66
92
nC
Q
1
9.0
Q
2
47
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 75 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
1.0
0.9
1.15
Vdc
Reverse Recovery Time
(I
S
= 75 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 2)
t
rr
70
ns
t
a
43
t
b
27
Reverse Recovery Stored Charge
Q
RR
0.16
C
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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