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參數(shù)資料
| 型號(hào)： | NTP75N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 |
| 中文描述： | 75 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NTP75N03R |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 2
1
Publication Order Number:
NTB75N03R/D
NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
NChannel D
2
PAK, TO220
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
MAXIMUM RATINGS
(T
J
= 25
°
C Unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
25
V
dc
GatetoSource Voltage Continuous
V
GS
±
20
V
dc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C
Single Pulse (t
p
= 10 s)
R
JC
P
D
I
D
I
DM
1.68
74.4
75
225
°
C/W
W
A
A
Thermal Resistance JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
60
2.08
12.6
°
C/W
W
A
Thermal Resistance JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
100
1.25
9.7
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 V
dc
, V
GS
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25 )
E
AS
71.7
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
http://onsemi.com
75 AMPERES
25 VOLTS
R
DS(on)
= 5.6 m
(Typ)
Device
Package
Shipping
ORDERING INFORMATION
NTP75N03R
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
12
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
75N03
Y
WW
= Device Code
= Year
= Work Week
P75N03R
YWW
1
Gate
3
Source
4
Drain
2
Drain
YWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
4
NTB75N03R
D
2
PAK
50 Units/Rail
NTB75N03RT4
D
2
PAK
800/Tape & Reel
75N03R
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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| NTP75N03RG | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP75N06 | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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