參數(shù)資料
型號: NT7502H-BDT
廠商: Electronic Theatre Controls, Inc.
英文描述: 65 X 132 RAM-Map LCD Controller / Driver
中文描述: 65 × 132 RAM的地圖LCD控制器/驅(qū)動器
文件頁數(shù): 35/54頁
文件大?。?/td> 687K
代理商: NT7502H-BDT
NT7502
Absolute Maximum Rating*
DC Supply Voltage (V
DD,
V
DD2
) .....................-0.3V to +3.6V
DC Supply Voltage (V
OUT
) ..............................-0.3V to +12V
DC Supply Voltage (V
0
)................................-0.3V to +11.5V
Input Voltage..........................................-0.3V to V
DD
+ 0.3V
Operating Ambient Temperature...................-40
°
C to +85
°
C
Storage Temperature..................................-55
°
C to +125
°
C
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device under these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute maximum
rating conditions for extended periods may affect device
reliability.
Electrical Characteristics
DC Characteristics
(V
SS
= 0V, V
DD
= 2.7 - 3.3V T
A
= -40 to 85
°
C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Condition
V
DD
Operating Voltage
2.4
3.5
V
2.4
3.5
V
V
DD2
Operating Voltage
2.4
3.0
V
Quadruple boosting
V
OUT
Booster output voltage
Voltage regulator
operation voltage
V
REG1
Reference voltage
6.0
12.0
V
V
0
4.5
11.5
V
2.04
2.10
2.16
V
T
A
= 25
°
C, -0.05%/
°
C
V
REG2
Reference voltage
2.00
2.10
2.20
V
T
A
= 25
°
C, -0.2%/
°
C
V
DD
= 3V, V
0
= 11V, built-in power supply off,
display on, display data = checker and no access,
T
A
= 25
°
C
4X boosting,
V
DD
,
V
DD2
= 3V, V
0
= 11V, built-in
power supply on, display on, display data = checker
and no access, T
A
= 25
°
C, temperature gradient is
-0.05%/
°
C, when V0 voltage internal resistor is
used. Normal mode
4X boosting,
V
DD,
V
DD2
= 3V, V
0
= 11V, built-in
power supply on, display on, display data = checker
and no access, T
A
= 25
°
C, temperature gradient is
-0.05%/
°
C, when V0 voltage internal resistor is
used. High power mode
I
DD1
Dynamic current
consumption 1
-
21
35
μ
A
I
DD2
Dynamic current
consumption 2
-
96
160
μ
A
I
DD3
Dynamic current
consumption 3
-
153
255
μ
A
I
SP
Sleep mode current
consumption
Standby mode current
consumption
0.01
5
μ
A
During sleep, T
A
= 25
°
C
I
SB
4
8
μ
A
During standby, T
A
= 25
°
C
V
IHC
High-level input voltage
0.8 X V
DD
V
DD
V
V
ILC
Low-level input voltage
V
SS
0.2 X V
DD
V
A0, D0 - D7,
RD
(E),
WR (
CLS, CL, FR, M/S, C86, P/S,
DOF
, RES , TMPS,
VRS, IRS, and
HPM
W
/
R
),
1
CS
, CS2,
V
OHC
High-level output voltage
0.8 X V
DD
V
DD
V
I
OH
= -0.5mA (D0 - D7, FR, FRS,
DOF
, and CL)
V
OLC
Low -level output voltage
V
SS
0.2 X V
DD
I
OL
= 0.5mA (D0 - D7, FR, FRS,
DOF
, and CL)
I
LI
Input leakage current
-1.0
1.0
μ
A
V
IN
= V
DD
or V
SS
(A0,
RD
(E), WR (
CS2, CLS, M/S, C86, P/S, IRS, TMPS, VRS and
RES
)
W
/
R
),
1
CS
,
I
HZ
HZ leakage current
-3.0
3.0
μ
A
When the D0 - D7, FR, CL, and
DOF
are in high
impedance
Parameter
35
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