參數(shù)資料
型號(hào): NT5SV8M16FT-75BI
廠商: NANYA TECHNOLOGY CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 MM, PLASTIC, TSSOP2-54
文件頁(yè)數(shù): 8/65頁(yè)
文件大?。?/td> 739K
代理商: NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
16
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Non-Minimum Write to Read Interval
COMMAND
WRITE A
READ B
NOP
tCK2, DQs
CAS latency = 2
DIN A0
tCK3, DQs
CAS latency = 3
DIN A0
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Input data for the Write is masked.
Input data must be removed from the DQs at least one clock
cycle before the Read data appears on the outputs to avoid
data contention.
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
NOP
DIN A1
(Burst Length = 4, CAS latency = 2, 3)
: “H” or “L”
相關(guān)PDF資料
PDF描述
NT5TU64M16DG-3C 64M X 16 DDR DRAM, 0.45 ns, PBGA84
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
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