參數(shù)資料
型號(hào): NT5SV8M16FT-75BI
廠商: NANYA TECHNOLOGY CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 MM, PLASTIC, TSSOP2-54
文件頁(yè)數(shù): 33/65頁(yè)
文件大?。?/td> 739K
代理商: NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
39
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Read Cycle
Symbol
Parameter
-6K/6KI
-75B/75BI
Units
Notes
Min.
Max.
Min.
Max.
tOH
Data Out Hold Time
ns
1
2.5
2.7
ns
2, 4
tLZ
Data Out to Low Impedance Time
0
0
ns
tHZ
Data Out to High Impedance Time
3
6
3
7
ns
3
tDQZ
DQM Data Out Disable Latency
2
2
CK
1. AC Output Load Circuit A.
2. AC Output Load Circuit B.
3. Referenced to the time at which the output achieves the open circuit condition, not to output voltage levels.
4. Data Out Hold Time with no load must meet 1.8ns (-75H, -75D, -75A).
Refresh Cycle
Symbol
Parameter
-6K/6KI
-75B/75BI
Units
Notes
Min.
Max.
Min.
Max.
tREF
Refresh Period
64
64
ms
1
tSREX
Self Refresh Exit Time
1
1
CK
1. 4096 auto refresh cycles.
Write Cycle
Symbol
Parameter
-6K/6KI
-75B/75BI
Units
Min.
Max.
Min.
Max.
tDS
Data In Set-up Time
1.5
1.5
ns
tDH
Data In Hold Time
1
0.8
ns
tDPL
Data input to Precharge
12
15
ns
tWR
Write Recovery Time
12
15
ns
tDAL3
Data In to Active Delay, CAS Latency = 3
5
5
CK
tDAL2
Data In to Active Delay, CAS Latency = 2
4
4
CK
tDQW
DQM Write Mask Latency
0
0
CK
相關(guān)PDF資料
PDF描述
NT5TU64M16DG-3C 64M X 16 DDR DRAM, 0.45 ns, PBGA84
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5SV8M16HS-6K 制造商:Nanya Technology Corporation 功能描述:DRAM
NT5SV8M8DT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-6K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-7K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM