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參數(shù)資料
| 型號(hào)： | NSS20600CF8T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 6000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 1206A-03, 8 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | NSS20600CF8T1G |
NSS20600CF8T1G
http://onsemi.com
5
PACKAGE DIMENSIONS
ChipFET
CASE 1206A
03
ISSUE G
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
mm
inches
SCALE 20:1
0.178
0.007
2.032
0.08
1.727
0.068
0.66
0.026
0.711
0.028
mm
inches
SCALE 20:1
Style 4
Basic
0.457
0.018
*For additional information on our Pb
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
E
A
b
e
e1
D
1
2
3
4
8
7
6
5
c
L
1
2
3
4
8
7
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
0.05 (0.002)
DIM
A
b
c
D
E
e
e1
L
H
E
MIN
1.00
0.25
0.10
2.95
1.55
NOM
1.05
0.30
0.15
3.05
1.65
0.65 BSC
0.55 BSC
0.35
1.90
5
°
NOM
MAX
1.10
0.35
0.20
3.10
1.70
MIN
0.039
0.010
0.004
0.116
0.061
MILLIMETERS
INCHES
NOM
0.28
1.80
0.42
2.00
0.011
0.071
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5
°
NOM
0.043
0.014
0.008
0.122
0.067
0.017
0.079
MAX
H
E
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone: 81
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NSS20600CF8/D
ChipFET is a trademark of Vishay Siliconix.
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Phone
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相關(guān)代理商/技術(shù)參數(shù) |
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| NSS20600CF8T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 7.0 A, Low VCE(sat) PNP Transistor |
| NSS20601CF8T1G | 功能描述:兩極晶體管 - BJT OCTAL BUS TRANSCEIVR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30070MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30071MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30100LT1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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