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參數(shù)資料
| 型號(hào)： | NSS30101LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 V, 2 A, Low VCE(sat) NPN Transistor(30V, 2A, 低VCE(sat) NPN晶體管) |
| 中文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | NSS30101LT1G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 0
1
Publication Order Number:
NSS30101L/D
NSS30101LT1G
30 V, 2 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a PbFree Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
1.0
A
Collector Current Peak
I
CM
2.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
310
2.5
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 1)
403
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
710
5.7
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 2)
176
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
575
mW
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 X 1.0 inch Pad.
Device
Package
Shipping
ORDERING INFORMATION
NSS30101LT1G
SOT23
(PbFree)
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
3
1
BASE
2
EMITTER
VS6
SOT23 (TO236)
CASE 318
STYLE 6
3
2
1
VS6 = Specific Device Code
3
1
2
http://onsemi.com
30 VOLTS
2.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 m
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS30201MR6T1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS35200CF8T1G | 功能描述:兩極晶體管 - BJT 2A 35V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS35200CF8T1G_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:35 V, 7 A, Low VCE(sat) PNP Transistor |
| NSS35200CF8TIG | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NSS35200MR6T1G | 功能描述:兩極晶體管 - BJT 2A 35V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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